| 发明名称 |
METHOD AND APPARATUS FOR THREE DIMENSIONAL ION IMPLANTATION |
| 摘要 |
A scan system for processing a substrate with an ion beam may include a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; and a scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis. |
| 申请公布号 |
US2015228445(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201414179988 |
申请日期 |
2014.02.13 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Chang Shengwu |
| 分类号 |
H01J37/147;H01J37/317;H01J37/30 |
主分类号 |
H01J37/147 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A scan system for processing a substrate with an ion beam, comprising:
a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; and a scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis. |
| 地址 |
Gloucester MA US |
