发明名称 |
SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE, DISPLAY MODULE INCLUDING THE DISPLAY DEVICE, AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE, THE DISPLAY DEVICE, AND THE DISPLAY MODULE |
摘要 |
The present invention provides a planar-type transistor using oxide semiconductor, and a semiconductor device having a capacitor connected to the transistor. It relates to a semiconductor device including a transistor and a capacitor. The transistor includes an oxide semiconductor layer, a gate insulating layer on the oxide semiconductor layer, a gate electrode on the gate insulating layer, a second insulating layer on the gate electrode, a third insulating layer on the second insulating layer, a source electrode on the third insulating layer and a drain electrode. The source and drain electrodes are electrically connected to the oxide semiconductor layer. The capacitor includes a first conductive layer, a second conductive layer, and a second insulating layer. The first conductive layer is provided on the same surface as the gate electrode. The second conductive layer is provided on the same surface as the source and drain electrodes. The second insulating layer is provided between the first conductive layer and the second conductive layer. |
申请公布号 |
KR20150092722(A) |
申请公布日期 |
2015.08.13 |
申请号 |
KR20150017531 |
申请日期 |
2015.02.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OKAZAKI KENICHI;KATAYAMA MASAHIRO;NAKADA MASATAKA |
分类号 |
H01L29/786;H01L27/32 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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