发明名称 PIEZOELECTRIC THIN-FILM SENSOR AND USE THEREOF
摘要 A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.
申请公布号 US2015226618(A1) 申请公布日期 2015.08.13
申请号 US201514618175 申请日期 2015.02.10
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 SHIH Wei-Yan
分类号 G01L1/16;G01P15/08 主分类号 G01L1/16
代理机构 代理人
主权项 1. A piezoelectric sensor comprising: a support structure; a channel extending through the support structure; a sensing material stack coupled to the support structure and extending over the channel, wherein the sensing material stack comprises: a structural layer;a first electrode layer disposed on the structural layer;a piezoelectric material disposed in a piezoelectric layer on the first electrode; anda second electrode disposed on the piezoelectric layer opposite the first electrode layer; and a filler material disposed within the channel and over the sensing material stack.
地址 Dallas TX US