NONVOLATILE STORAGE DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce parasitic capacitance of wiring and reduce a possibility of separation of a resistance change element in a nonvolatile storage device.SOLUTION: A nonvolatile storage device comprises: a first interlayer insulation layer 12; a second interlayer insulation layer 13 which covers the first interlayer insulation layer 12; a plurality of resistance change elements 19 formed on the second interlayer insulation layer 13; a third interlayer insulation layer 14 formed only on a storage region so as to cover at least lateral faces of the plurality of resistance change elements 19; a fourth interlayer insulation layer 15 formed to cover a part of the second interlayer insulation layer 13 in a circuit region and the third interlayer insulation layer 14; and wiring 17, 25 formed on the first interlayer insulation layer 12 and the fourth interlayer insulation layer 15, respectively. Relative permittivity of a material which composes each of the second interlayer insulation layer 13 and the third interlayer insulation layer 14 is larger than relative permittivity of a material which composes each of the first interlayer insulation layer 12 and the fourth interlayer insulation layer 15.