NONVOLATILE RANDOM ACCESS MEMORY

摘要

According to one embodiment, a memory includes a memory cell array with banks, each bank including rows, a first word lines provided in corresponding to the rows, an address latch circuit which latches a first row address signal, a row decoder which activates one of the first word lines, and a control circuit which is configured to execute a first operation which activates one of the banks based on a bank address signal when a first command is loaded, and a second operation which latches the first row address signal in the address latch circuit, and execute a third operation which activates one of the first word lines by the row decoder based on a second row address signal and the first row address signal latched in the address latch circuit when a second command is loaded after the first command.

主权项

1. A nonvolatile random access memory comprising:
a memory cell array including banks, each bank including rows; first word lines formed in one-to-one correspondence with the rows; an address latch circuit configured to latch a first row address signal; a row decoder configured to activate one of the first word lines; a clock generator configured to generate an internal clock signal; and a control circuit configured to receive a first command based on a high edge of one clock cycle of the internal clock signal, and receive a second command based on a low edge of the one clock cycle.