发明名称 HIGH-BANDWIDTH DRAM USING INTERPOSER AND STACKING
摘要 Embodiments of the present disclosure provide a packaging arrangement that comprises an interposer and a system on chip (SoC) die disposed on the interposer. The packaging arrangement also comprises a plurality of memory dies stacked on one another to provide a stack of memory dies. A bottom memory die of the stack of memory dies is disposed on the interposer adjacent to the SoC die. Each memory die includes input/output (I/O) pads, wherein the I/O pads of a corresponding memory die are located on only one side of the corresponding memory die. The plurality of memory dies is stacked on one another such that all of the I/O pads are arranged along a same side of the stack of memory dies. The plurality of memory dies is also stacked such that all the I/O pads are exposed.
申请公布号 WO2015120226(A1) 申请公布日期 2015.08.13
申请号 WO2015US14749 申请日期 2015.02.06
申请人 SUTARDJA, SEHAT 发明人 SUTARDJA, SEHAT
分类号 H01L25/065;G11C5/06;H01L21/56;H01L25/18 主分类号 H01L25/065
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