Systems and Methods for Forming Thermoelectric Devices

摘要

A vapor phase method for forming a thermoelectric element comprises providing a substrate in a reaction space, the substrate including a pattern of a metallic material adjacent to the substrate, which metallic material is configured to catalyze the oxidation of the substrate. The metallic material is then exposed to a gas having an oxidizing agent and a chemical etchant to form holes in or wires from the substrate.

主权项

1. A method for forming a thermoelectric element, comprising:
(a) providing a substrate in a reaction space, wherein said substrate comprises a semiconductor material, wherein said substrate has a pattern of a metallic material adjacent to said substrate, which metallic material is configured to catalyze the oxidation of said substrate; (b) exposing said metallic material to a vapor phase oxidizing agent and a vapor phase chemical etchant; and (c) etching said substrate at an etch rate of at least about 0.01 micrometers/second to form holes in or wires from the substrate, thereby forming said thermoelectric element.