发明名称 PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM
摘要 A photoelectric conversion apparatus includes a first unit pixel including a first transfer transistor configured to transfer electric charges from a photoelectric conversion unit to an impurity diffusion region and a second unit pixel including a second transfer transistor configured to transfer electric charges from a photoelectric conversion unit to an impurity diffusion region, and a potential at a channel of the first transfer transistor when the first transfer transistor is on-state is higher than a potential at a channel of the second transfer transistor when the second transfer transistor is on-state.
申请公布号 US2015228686(A1) 申请公布日期 2015.08.13
申请号 US201514615293 申请日期 2015.02.05
申请人 CANON KABUSHIKI KAISHA 发明人 Kususaki Tomoki
分类号 H01L27/146;H04N5/238 主分类号 H01L27/146
代理机构 代理人
主权项 1. A photoelectric conversion apparatus comprising: a first unit pixel, and a second unit pixel, wherein the first unit pixel includes a first photoelectric conversion unit, a first transfer transistor, and a first impurity diffusion region, the second unit pixel includes a second photoelectric conversion unit, a second transfer transistor, and a second impurity diffusion region, the first transfer transistor transfers electric charges generated by the first photoelectric conversion unit to the first impurity diffusion region when the first transfer transistor is turned on during an electric charge accumulating period, the second photoelectric conversion unit accumulates generated electric charges during the electric charge accumulating period, and the second transfer transistor transfers the electric charges generated by the second photoelectric conversion unit to the second impurity diffusion region when the second transfer transistor is turned on after the electric charge accumulating period is ended, and a potential at a channel of the first transfer transistor when the first transfer transistor is on-state is higher than a potential at a channel of the second transfer transistor when the second transfer transistor is on-state.
地址 Tokyo JP