Semiconductor Device with Post-Passivation Interconnect Structure and Method of Forming the Same

摘要

A semiconductor device, including a protective layer overlying a contact pad and a dummy pad on a semiconductor substrate, an interconnect structure overlying the protective layer and contacting part of the dummy pad through a contact via passing through the protective layer, a bump overlying the interconnect structure positioned over the dummy pad.

主权项

1. A method of forming a semiconductor device, comprising:
forming a contact pad over a semiconductor substrate; forming a dummy pad over a semiconductor substrate, spaced apart from the contact pad; forming a polymer layer overlying the contact pad, the dummy pad and the semiconductor substrate; forming a first opening in the polymer layer, exposing a portion of the contact pad; forming a second opening in the polymer layer, exposing a portion of the dummy pad; forming a conductive layer overlying the polymer layer and contacting the exposed portions of the contact pad and the dummy pad through the first opening and the second opening; and forming a bump on the conductive layer, positioned over the dummy pad.