METHOD OF FORMING CU PILLAR BUMP WITH NON-METAL SIDEWALL SPACER AND METAL TOP CAP

摘要

A method of forming an integrated circuit device includes forming a conductive element over a substrate, wherein the conductive element is over an under bump metallurgy (UBM) layer, and the UBM layer comprises a first UBM layer and a second UBM layer over the first UBM layer. The method further includes etching the second UBM layer to expose a portion of the first UBM layer beyond a periphery of the conductive element. The method further includes forming a protection layer over sidewalls of the conductive element, over sidewalls of the second UBM layer and over a top surface of the first UBM layer. The method further includes etching the first UBM layer to remove a portion of the first UBM layer. The method further includes forming a cap layer over a top surface of the conductive element.

主权项

1. A method of forming an integrated circuit device, the method comprising:
forming a conductive element over a substrate, wherein the conductive element is over an under bump metallurgy (UBM) layer, and the UBM layer comprises a first UBM layer and a second UBM layer over the first UBM layer; etching the second UBM layer to expose a portion of the first UBM layer beyond a periphery of the conductive element; forming a protection layer over sidewalls of the conductive element, over sidewalls of the second UBM layer and over a top surface of the first UBM layer; etching the first UBM layer to remove a portion of the first UBM layer; and forming a cap layer over a top surface of the conductive element.