Plasma Method for Reducing Post-Lithography Line Width Roughness

摘要

The present disclosure is related to a method for treating a photoresist structure on a substrate, the method comprising producing one or more resist structures on a substrate, introducing the substrate in a plasma reactor, and subjecting the substrate to a plasma treatment at a temperature lower than zero degrees Celsius, such as between zero and −110° C. The plasma treatment may be a H2 plasma treatment performed in an inductively coupled plasma reactor. The treatment time may be at least 30 s.

主权项

1. A method for treating a photoresist structure on a substrate, the method comprising:
producing one or more resist structures on a substrate; introducing the substrate in a plasma reactor; subjecting the substrate to a plasma treatment at a temperature lower than zero degrees Celsius.