| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing local concentration of a current and heat at an ON operation, and of improving the breakdown resistance.SOLUTION: A semiconductor device according to an embodiment comprises: a semiconductor substrate having a vertical element; a first electrode provided on one surface of the semiconductor substrate; a second electrode provided on the another surface of the semiconductor substrate; a first conductive member provided at the side opposed to the semiconductor substrate, of a central part of the first electrode; and a second conductive member provided at the side opposed to the semiconductor substrate, of the second electrode. An electric resistance between the central part of the first electrode of the vertical element and the second electrode is lower than an electric resistance between a peripheral part of the first electrode that is adjacent to the central part and in which no first conductive member is provided, and the second electrode. |
