发明名称 |
COMPLIANT BIPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODES |
摘要 |
A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes. |
申请公布号 |
US2015228525(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201514694808 |
申请日期 |
2015.04.23 |
申请人 |
LuxVue Technology Corporation |
发明人 |
Golda Dariusz;Bibl Andreas |
分类号 |
H01L21/683 |
主分类号 |
H01L21/683 |
代理机构 |
|
代理人 |
|
主权项 |
1. A transfer head array comprising:
a base substrate; and an array of compliant transfer heads; wherein each compliant transfer head comprises a double sided clamped beam that extends across a cavity; and wherein each double sided clamped beam comprises:
a protruding mesa structure over the cavity to provide a localized contact point for the compliant transfer head;a first beam length extending from a first side of the cavity;a second beam length extending from a second side of the cavity;a first 180 degree bend along the first beam length; anda second 180 degree bend along the second beam length. |
地址 |
Santa Clara CA US |