| 发明名称 |
METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM |
| 摘要 |
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement. |
| 申请公布号 |
US2015228486(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201514691904 |
申请日期 |
2015.04.21 |
| 申请人 |
ENTEGRIS, INC. |
发明人 |
Kaim Robert;Sweeney Joseph D.;Avila Anthony M.;Ray Richard S. |
| 分类号 |
H01L21/22;H01L21/223 |
主分类号 |
H01L21/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A packaged gas mixture for use in ion implantation, comprising a gas storage and dispensing vessel containing a gas mixture comprising boron trifluoride, xenon, and hydrogen, wherein the boron trifluoride is isotopically enriched above natural abundance level of a boron isotope. |
| 地址 |
Billerica MA US |
