| 发明名称 |
INTERNAL VOLTAGE GENERATION CIRCUIT, SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM |
| 摘要 |
An internal voltage generation circuit includes a charging unit suitable for charging electrical charges for a time corresponding to a control signal; a charge control unit suitable for generating the control signal, which is activated for a time corresponding to temperature information, and controlling a charging operation of the charging unit; and an output unit suitable for generating an internal voltage based on charge amount by the charging operation. |
| 申请公布号 |
US2015228326(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201414326123 |
申请日期 |
2014.07.08 |
| 申请人 |
SK hynix Inc. |
发明人 |
JIN Hyun-Jong |
| 分类号 |
G11C11/4074;G11C11/4093 |
主分类号 |
G11C11/4074 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An internal voltage generation circuit comprising:
a charging unit suitable for generating a charge for a time corresponding to a control signal; a charge control unit suitable for generating the control signal which is activated for a time corresponding to temperature information, and controlling a charging operation of the charging unit; and an output unit suitable for generating an internal voltage based on the charge generated by the charging operation. |
| 地址 |
Gyeonggi-do KR |
