发明名称 Method for forming silicon oxide and metal nanopattern's, and Magnetic recording medium for information storage using the same
摘要 The present invention relates to a method for forming a silicon oxide nanopattern, in which the method can be used to easily form a nanodot or nanohole-type nanopattern, and a metal nanopattern formed by using the same can be properly applied to a next-generation magnetic recording medium for storage information, etc., a method for forming a metal nanopattern, and a magnetic recording medium for information storage using the same.;The method for forming a silicon oxide nanopattern includes the steps of forming a block copolymer thin film including specific hard segments and soft segments containing a (meth)acrylate-based repeating unit on silicon oxide of a substrate; conducting orientation of the thin film; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern.
申请公布号 US2015228298(A1) 申请公布日期 2015.08.13
申请号 US201314419616 申请日期 2013.09.09
申请人 LG CHEM, LTD. ;IUCF-HYU (Industry-University Cooperation Foundatiion Hanyang University) 发明人 Han Yang Kyoo;Lee Je Gwon;Lee Hyun Jin;Kim No Ma;Yoon Sung Soo;Shin Eun Ji;Jung Yeon Sik
分类号 G11B5/855;G11B5/74;G11B5/84;G11B5/851 主分类号 G11B5/855
代理机构 代理人
主权项 1. A method for forming a silicon oxide nanopattern, comprising the steps of: forming a block copolymer thin film including hard segments containing a repeating unit of the following Chemical Formula 1 and soft segments containing a (meth)acrylate-based repeating unit of the following Chemical Formula 2 on silicon oxide of a substrate; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern: in Chemical Formula 1, n is an integer of 5 to 600, R is hydrogen or methyl, R′ is X,X is —Z—R″, Y is alkylene having 1 to 10 carbon atoms, Z is arylene having 6 to 20 carbon atoms, R″ is linear or branched hydrocarbon having 10 to 20 carbon atoms, or linear or branched perfluorohydrocarbon having 10 to 20 carbon atoms, and in Chemical Formula 2, m is an integer of 30 to 1000, R1 is hydrogen or methyl, and R2 is alkyl having 1 to 20 carbon atoms.
地址 Seoul KR