发明名称 |
Method for forming silicon oxide and metal nanopattern's, and Magnetic recording medium for information storage using the same |
摘要 |
The present invention relates to a method for forming a silicon oxide nanopattern, in which the method can be used to easily form a nanodot or nanohole-type nanopattern, and a metal nanopattern formed by using the same can be properly applied to a next-generation magnetic recording medium for storage information, etc., a method for forming a metal nanopattern, and a magnetic recording medium for information storage using the same.;The method for forming a silicon oxide nanopattern includes the steps of forming a block copolymer thin film including specific hard segments and soft segments containing a (meth)acrylate-based repeating unit on silicon oxide of a substrate; conducting orientation of the thin film; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern. |
申请公布号 |
US2015228298(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201314419616 |
申请日期 |
2013.09.09 |
申请人 |
LG CHEM, LTD. ;IUCF-HYU (Industry-University Cooperation Foundatiion Hanyang University) |
发明人 |
Han Yang Kyoo;Lee Je Gwon;Lee Hyun Jin;Kim No Ma;Yoon Sung Soo;Shin Eun Ji;Jung Yeon Sik |
分类号 |
G11B5/855;G11B5/74;G11B5/84;G11B5/851 |
主分类号 |
G11B5/855 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a silicon oxide nanopattern, comprising the steps of:
forming a block copolymer thin film including hard segments containing a repeating unit of the following Chemical Formula 1 and soft segments containing a (meth)acrylate-based repeating unit of the following Chemical Formula 2 on silicon oxide of a substrate; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern: in Chemical Formula 1, n is an integer of 5 to 600, R is hydrogen or methyl, R′ is X,X is —Z—R″, Y is alkylene having 1 to 10 carbon atoms, Z is arylene having 6 to 20 carbon atoms, R″ is linear or branched hydrocarbon having 10 to 20 carbon atoms, or linear or branched perfluorohydrocarbon having 10 to 20 carbon atoms, and
in Chemical Formula 2, m is an integer of 30 to 1000, R1 is hydrogen or methyl, and R2 is alkyl having 1 to 20 carbon atoms. |
地址 |
Seoul KR |