| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT |
| 摘要 |
A semiconductor light emitting element includes a substrate including GaN, a first cladding layer provided over the substrate, a quantum well active layer provided over the first cladding layer, a second cladding layer provided over the quantum well active layer, and a first refractive index correction layer provided between the substrate and the first cladding layer. The first refractive index correction layer includes a layer of In1-x-yAlyGaxN (where x+y<1), and x and y satisfy the relations x/1.05+y/0.69>1, x/1.13+y/0.49>1, or x/1.54+y/0.24>1, and the relations x/0.91+y/0.75≧1 and x/1.08+y/0.91≦1. |
| 申请公布号 |
US2015229104(A1) |
申请公布日期 |
2015.08.13 |
| 申请号 |
US201514688746 |
申请日期 |
2015.04.16 |
| 申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
TAKAYAMA Toru |
| 分类号 |
H01S5/343;H01S5/22;H01S5/34;H01S5/02;H01S5/30 |
主分类号 |
H01S5/343 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor light emitting element, comprising:
a substrate including GaN; a first cladding layer of a first conductivity type provided over the substrate and including In1-n1-n2Aln2Gan1N (where 0<n1<1, 0≦n2<1, and n1+n2≦1); a quantum well active layer provided over the first cladding layer; a second cladding layer of a second conductivity type provided over the quantum well active layer and including In1-m1-m2Alm2Gam1N (where 0<m1<1, 0<m2<1, and m1+m2≦1); and a first refractive index correction layer of the first conductivity type provided between the substrate and the first cladding layer, wherein the first refractive index correction layer includes a layer of In1-x-yAlyGaxN (where x+y<1), x and y satisfy the relations x/1.05+y/0.69>1, x/0.91+y/0.75≧1, and x/1.08+y/0.91≦1, and the quantum well active layer has an emission wavelength of equal to or greater than 430 nm. |
| 地址 |
Osaka JP |
