SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD

摘要

Disclosed is an apparatus and method for processing substrate, which is capable of realizing uniformity of a thin film deposited on a substrate, and facilitating quality control for the thin film, wherein the apparatus includes a process chamber, a chamber lid, a substrate supporter for supporting at least one of substrates, a source gas distributor for distributing source gas to a source gas distribution area, a reactant gas distributor for distributing reactant gas to a reactant gas distribution area, a purge gas distributor for distributing purge gas to a purge gas distribution area defined between the source gas distribution area and the reactant gas distribution area, wherein a distance between the purge gas distributor and the substrate is relatively smaller than a distance between the substrate and each of the source gas distributor and reactant gas distributor.

主权项

1. A substrate processing apparatus comprising:
a process chamber for preparing a process space; a chamber lid for covering an upper side of the process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, a source gas distributor for distributing source gas to a source gas distribution area defined on the substrate supporter, wherein the source gas distributor is provided in the chamber lid; a reactant gas distributor for distributing reactant gas to a reactant gas distribution area defined on the substrate supporter, wherein the reactant gas distributor is provided in the chamber lid; and a purge gas distributor for distributing purge gas to a purge gas distribution area defined between the source gas distribution area and the reactant gas distribution area, wherein the purge gas distributor is provided in the chamber lid, wherein a distance between the purge gas distributor and the substrate is relatively smaller than a distance between the substrate and each of the source gas distributor and reactant gas distributor.