| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same, capable of suppressing abnormal oxidation of an oxygen barrier film and a conductive plug that are a base of a capacitor.SOLUTION: A capacitor formed by sequentially laminating a lower electrode 7, a dielectric body film 8 consisting of a ferroelectric body or a high-dielectric body, and an upper electrode 9 is arranged on an interlayer insulating film 3 via at least a conductive oxygen barrier film 6. At least a part of a lateral face of the conductive oxygen barrier film 6 is covered with an oxygen intrusion part 10 or an insulative oxygen barrier film. A crystallinity improvement conductive adhesion film 5 may be further provided between the conductive oxygen barrier film 6 and the conductive plug 4. At least a part of a lateral face of this crystallinity improvement conductive adhesion film 5 may be also covered with the oxygen intrusion part 10. |
