| 摘要 |
The purpose of the present invention is to improve characteristics of a semiconductor device. The semiconductor is configured to pass through a barrier layer (BA) among a n+ layer (NL), a n-type layer (Dn), a p-type layer (Dp), a channel layer (CH) and a barrier layer (BA) and configured to include a groove (T) reaching the middle of the channel layer (CH); a gate electrode (GE) disposed with an insulation film (GI) interposed therebetween inside the groove (T); a source electrode (SE) and a drain electrode (DE) formed on both sides of the upper side of the barrier layers (BA) on the gate electrode (GE), respectively. In addition, the n-type layer (Dn) and the drain electrode (DE) are electrically connected via a connection unit (VIAD) which can reach the n+ layer (NL). Further, the p-type layer (Dp) and the source electrode (SE) are electrically connected via a connection unit (VIAS) which can reach the p-type layer (Dp). As described above, it is possible to prevent destruction of the device, caused by an avalanche breakdown, by installing a diode containing the p-type layer (Dp) and the n-type layer (Dn) between the source electrode (SE) and the drain electrode (DE). |
