| 摘要 |
A semiconductor device comprising: a termination trench that passes once around a region in which a plurality of gate trenches are formed; a lower-end p-type region of a p-type, which is in contact with the lower end of the termination trench; an outer-periphery p-type region of a p-type, which is in contact with the termination trench from the outer peripheral side, and is exposed to the surface of the semiconductor substrate; a plurality of guard ring regions of a p-type, which are formed more peripherally outward than the outer-periphery p-type region, and are exposed to the surface of the semiconductor substrate; and an outer-periphery n-type region of an n-type, which isolates the outer-periphery p-type region from the plurality of guard ring regions, and isolates the plurality of guard ring regions from each other. |
