SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an SGT structure and a manufacturing method of the same, which form a fin semiconductor layer, a columnar semiconductor layer, a gate electrode and gate wiring by two masks and which is a gate last process and functions an upper part of the columnar semiconductor layer as an n-type semiconductor layer or a p-type semiconductor layer by a difference in work function between metal and semiconductor.SOLUTION: A semiconductor device manufacturing method comprises: a first step of forming a fin semiconductor layer on a semiconductor substrate and forming a first insulation film around the fin semiconductor layer; a second step of forming a first dummy gate formed by a columnar semiconductor layer and first polysilicon; a third step of forming a second dummy gate on side walls of the first dummy gate and the columnar semiconductor layer; and a fourth step of forming a side wall composed of a fifth insulation film around the second dummy gate by leaving the fifth insulation film in a side wall shape and forming a second diffusion layer on an upper part of the fin semiconductor layer and a lower part of the columnar semiconductor layer and forming a compound of metal and semiconductor on the second diffusion layer.