发明名称 STORAGE DEVICE EQUIPPED WITH MAGNETIC TUNNEL JUNCTION ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To simply initialize an MTJ element using a current writing method by a plain circuit configuration.SOLUTION: An LSI chip 100 which composes a storage device comprises: magnetic tunnel junction (MTJ) elements, each of which composes a storage element of a flip-flop FF arranged in a circuit module 10; current writing means for causing the magnetic tunnel junction element to store data by passing current corresponding to data of a writing target through the magnetic tunnel junction element; and field writing means (power supply control circuit 31, loop parts 33a, 33b, constant current sources 39a, 39b) for causing a plurality of magnetic tunnel junction elements to store common data by applying magnetic field to the plurality of magnetic tunnel junction elements.</p>
申请公布号 JP2015146395(A) 申请公布日期 2015.08.13
申请号 JP20140018949 申请日期 2014.02.03
申请人 TOHOKU UNIV 发明人 HANIYU TAKAHIRO;MOCHIZUKI AKIRA;ONO HIDEO
分类号 H01L21/8246;G11C11/15;H01L21/8244;H01L27/105;H01L27/11;H01L29/82;H01L43/08 主分类号 H01L21/8246
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