| 主权项 |
1. A nitride semiconductor laser element comprising an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer,
the n-type semiconductor layer comprising an n-side optical guide layer, the active layer comprising two or more well layers, and at least one barrier layer provided between the well layers, the p-type semiconductor layer comprising an electron barrier layer having band gap energy higher than that of all barrier layers comprised in the active layer, a p-side optical guide layer being provided between a final well layer and the electron barrier layer, the final well layer being a well layer nearest to the p-type semiconductor layer of the two or more well layers, the p-side optical guide layer comprising a composition graded layer of AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1) having band gap energy increasing approximately linearly from a side of the final well layer to a side of the electron barrier layer, the p-side optical guide layer having a thickness in a range between 500 and 5,000 angstrom. |
