SEMICONDUCTOR STRUCTURE HAVING FILM INCLUDING GERMANIUM OXIDE ON GERMANIUM LAYER AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film 34 that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10−5×EOT+4 A/cm2 or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.

主权项

1. A semiconductor structure comprising:
a germanium layer; an insulating film that has a film that comprises germanium oxide and is formed on the germanium layer; and a high dielectric oxide film that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and if a metal film comprising gold is formed on the insulating film, a leak current density is 10−5×EOT+4 A/cm2 or less when a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V, wherein log10μeff (cm2/V·s) is more than −0.59×log10Ns+10.19 when Ns is 5×1012 cm−2 or more in a case where the germanium layer is a p-type, a face current density in the germanium layer is Ns (cm−2) and an electron mobility of the germanium layer obtained by a split CV method is μeff (cm2/V·s).