发明名称 GAS SUPPLYING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus includes supplying the process gas by controlling a flow rate value of the gas to be a first value during a first period; supplying the process gas by controlling the flow rate value of the gas to be a second value smaller than the first value during a second period; supplying the process gas by controlling the flow rate value of the gas to be a third value greater than the first value during a third period; and supplying the process gas by controlling the flow rate value of the gas to be a fourth value smaller than the second value during a fourth period, wherein these steps are periodically repeated in a predetermined order.
申请公布号 US2015228460(A1) 申请公布日期 2015.08.13
申请号 US201514614900 申请日期 2015.02.05
申请人 Tokyo Electron Limited 发明人 MIZUTANI Tomoyuki;TSUJIMOTO Hiroshi
分类号 H01J37/32;H01L21/285;H01L21/67;H01L21/311;H01L21/3213;H01L21/02;H01L21/3065 主分类号 H01J37/32
代理机构 代理人
主权项 1. A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus, the gas supplying method comprising: a first step of supplying the process gas containing the gas by controlling a flow rate value of the gas to be a first flow rate value during a first period; a second step of supplying the process gas containing the gas by controlling the flow rate value of the gas to be a second flow rate value smaller than the first flow rate value during a second period; a third step of supplying the process gas containing the gas by controlling the flow rate value of the gas to be a third flow rate value greater than the first flow rate value during a third period; and a fourth step of supplying the process gas containing the gas by controlling the flow rate value of the gas to be a fourth flow rate value smaller than the second flow rate value during a fourth period, wherein the first step, the second step, the third step, and the fourth step are periodically repeated in a predetermined order.
地址 Tokyo JP