发明名称 |
GAS SUPPLYING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus includes supplying the process gas by controlling a flow rate value of the gas to be a first value during a first period; supplying the process gas by controlling the flow rate value of the gas to be a second value smaller than the first value during a second period; supplying the process gas by controlling the flow rate value of the gas to be a third value greater than the first value during a third period; and supplying the process gas by controlling the flow rate value of the gas to be a fourth value smaller than the second value during a fourth period, wherein these steps are periodically repeated in a predetermined order. |
申请公布号 |
US2015228460(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201514614900 |
申请日期 |
2015.02.05 |
申请人 |
Tokyo Electron Limited |
发明人 |
MIZUTANI Tomoyuki;TSUJIMOTO Hiroshi |
分类号 |
H01J37/32;H01L21/285;H01L21/67;H01L21/311;H01L21/3213;H01L21/02;H01L21/3065 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
1. A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus, the gas supplying method comprising:
a first step of supplying the process gas containing the gas by controlling a flow rate value of the gas to be a first flow rate value during a first period; a second step of supplying the process gas containing the gas by controlling the flow rate value of the gas to be a second flow rate value smaller than the first flow rate value during a second period; a third step of supplying the process gas containing the gas by controlling the flow rate value of the gas to be a third flow rate value greater than the first flow rate value during a third period; and a fourth step of supplying the process gas containing the gas by controlling the flow rate value of the gas to be a fourth flow rate value smaller than the second flow rate value during a fourth period, wherein the first step, the second step, the third step, and the fourth step are periodically repeated in a predetermined order. |
地址 |
Tokyo JP |