发明名称 |
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS |
摘要 |
A plasma processing method performs an etching process (S101) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (S102) of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process. Thereafter, the plasma processing method performs a titanium-containing material removal process (S103) of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the etching process. |
申请公布号 |
US2015228458(A1) |
申请公布日期 |
2015.08.13 |
申请号 |
US201314424217 |
申请日期 |
2013.08.07 |
申请人 |
Tokyo Electron Limited |
发明人 |
Harada Akitoshi |
分类号 |
H01J37/32;C23F4/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma processing method performed in a plasma processing apparatus, the plasma processing method comprising:
a first process of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate, in which an insulating film is formed and a mask film of a titanium-containing material is formed on a surface of the insulating film, with plasma of the first fluorine-containing gas; a second process of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the first process; and a third process of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the first process. |
地址 |
Tokyo JP |