发明名称 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
摘要 A plasma processing method performs an etching process (S101) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (S102) of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process. Thereafter, the plasma processing method performs a titanium-containing material removal process (S103) of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the etching process.
申请公布号 US2015228458(A1) 申请公布日期 2015.08.13
申请号 US201314424217 申请日期 2013.08.07
申请人 Tokyo Electron Limited 发明人 Harada Akitoshi
分类号 H01J37/32;C23F4/00 主分类号 H01J37/32
代理机构 代理人
主权项 1. A plasma processing method performed in a plasma processing apparatus, the plasma processing method comprising: a first process of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate, in which an insulating film is formed and a mask film of a titanium-containing material is formed on a surface of the insulating film, with plasma of the first fluorine-containing gas; a second process of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the first process; and a third process of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the first process.
地址 Tokyo JP