| 摘要 |
A photoelectric conversion element that is provided with an n-type single-crystal silicon substrate (1). The n-type single-crystal silicon substrate (1) includes a center region (11) and an end region (12). The center region (11) has a center point that is the same as the center point of the n-type single-crystal silicon substrate (1), and is a region that is enclosed by a circle that has a diameter that is 40% of the length of the shortest side of the four sides of the n-type single-crystal silicon substrate (1). The center region (11) has a thickness t1. The end region (12) is a region that is within 5 mm of an end of the n-type single-crystal silicon substrate (1). The end region (12) is arranged further to the outside than the center region (11) in the in-plane direction of the n-type single-crystal silicon substrate (1), and has a thickness t2 that is thinner than the thickness t1. In addition, the average surface roughness of the end region (12) is smaller than the average surface roughness of the center region (11). |
