| 摘要 |
The purpose of the present invention is to provide a semiconductor light emitting element formed by growing an active layer in the c-axis direction and having a peak emission wavelength of at least 530nm, wherein the light emission efficiency is greater than the conventional art. In the present invention, a semiconductor light-emitting element has a peak emission wavelength of at least 530nm and includes: an n-type semiconductor layer; a super-lattice layer formed above the n-type semiconductor layer and composed of a laminated body of a plurality of nitride semiconductors having different band gaps; an active layer formed above the super-lattice layer; and a p-type semiconductor layer formed above the active layer. In the active layer, the following are layered: a first layer comprising Inx1Ga1-x1N (0≤X1≤0.01); a second layer comprising Inx2Ga1-x2N (0.2<X2<1); and a third layer comprising AlY1Ga1-Y1N (0<Y1<1). At least the first layer and the second layer are cyclically formed. |
