| 摘要 |
<p>An upper electrode (34) and a lower electrode (16) are disposed opposite to each other in a process container (10) configured to be vacuum-exhausted. The upper electrode (34) is connected to a first RF power supply (48) configured to apply a first RF power for plasma generation. The lower electrode (16) is connected to a second RF power supply (90) configured to apply a second RF power for ion attraction. The second RF power supply (90) is provided with a controller (95) preset to control the second RF power supply (90) to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power set to deposit polymers on a predetermined film on a wafer (W) and a second power set to promote etching of the predetermined film on the wafer (W).</p> |
