| 摘要 |
<p>Provided is an electronic device. The electronic device includes a semiconductor memory. The semiconductor memory according to an embodiment of the present invention includes: a first vertical electrode formed on a substrate; a first variable resistance layer enclosing the first vertical electrode; a second electrode enclosing the first variable resistance layer; a second variable resistance layer enclosing the second vertical electrode; and a plurality of horizontal electrodes formed by being connected to the external side of the second variable resistance layer and stacked apart from each other upward and downward.</p> |
