| 摘要 |
Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer (130), an active layer (140) comprising a plurality of quantum well layers (142) and a plurality of barrier layers (141), which are alternately laminated on the first conductive type semiconductor layer (130), and a second conductive type semiconductor layer (150) on the active layer (140). The plurality of barrier layers (141) comprise a plurality of first barrier layers (141a-d) comprising a conductive type dopant, and the plurality of first barrier layers (141a-d) include a doping concentrations of the conductive type dopant different from each layer. |
