发明名称 |
Enabling bulk finFET-based devices for finFET technology with dielectric isolation |
摘要 |
A method for forming a dielectric-isolated bulk fin field-effect transistor (finFET) device includes forming a second isolation layer over a first structure including multiple partially exposed fins and horizontal areas including a first isolation layer. The second isolation layer is removed from horizontal areas of a first portion of the first structure. An oxide layer is formed under the fins of the first portion of the first structure. The second isolation layer is removed in order to expose the partially exposed fins and horizontal areas of the first structure to form a second structure, on which gate regions are formed. |
申请公布号 |
EP2905808(A1) |
申请公布日期 |
2015.08.12 |
申请号 |
EP20150000194 |
申请日期 |
2015.01.23 |
申请人 |
BROADCOM CORPORATION |
发明人 |
PONOTH, SHOM;CHANGYOK, PARK |
分类号 |
H01L21/84;H01L27/12 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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