| 摘要 |
<p>To provide a process for producing an EUV mask blank, capable of reducing foreign matter attributable to a sputtering target, and a process for producing a substrate with a functional film for such a mask blank. A process for producing a reflective mask blank for EUVL, which comprises at least a step of forming a Mo/Si multilayer reflective film, a step of forming a ruthenium (Ru) film or Ru compound film as a protective layer on the multilayer reflective film, and a step of forming an absorber layer to absorb EUV light, on the Ru film or Ru compound film, wherein the formation of the Mo film, the Si film, and the Ru film or Ru compound film, is carried out by means of an ion beam sputtering method, and in the formation of the Si film of the Mo/Si multilayer reflective film and in the formation of the Ru film or Ru compound film, the target angle, the type of the process gas, the process gas pressure, the RF power of ion source, the suppresser voltage, the ion beam voltage and the ion beam current are adjusted to be substantially the same; and based on an erosion region of a sputtering target used for the formation of the Si film, an erosion region and a non-erosion region of a sputtering target to be used for the formation of the Ru film or Ru compound film, are predicted, roughening treatment is applied to the non-erosion region thus predicted of the Ru target or Ru compound target, and then the formation of the Ru film or Ru compound film is carried out.</p> |
