| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor by which no trouble caused by migration is generated, and which has a sufficiently-small wiring resistance and excellent transistor characteristics, even in the case that an electrode is formed by a wet process. <P>SOLUTION: A thin-film transistor has a gate electrode, a gate insulating film, a source electrode and a drain electrode, and an organic semiconductor layer on a substrate 10. In the thin-film transistor, the source electrode and the drain electrode consist of a three-layer lamination body. In the three-layer lamination body, the film thickness of each layer decreases in the order of a first layer, a second layer, and a third layer. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
