| 摘要 |
<p>The present invention relates to an etching apparatus which is capable of etching the entire surface of a substrate uniformly even if the substrate is large-sized and in which deterioration of etching shape does not occur. An etching apparatus 1 has a chamber 2 having a plasma generating space 9 and a processing space 6, a coil 16 disposed on the outside of a portion corresponding to the plasma generating space 9, a platen 10 which is provided in the processing space 6 and on which a substrate K is to be placed, a processing gas supply mechanism 19 for supplying a processing gas into the plasma generating space 9, an RF power supply mechanism 17 for supplying RF power to the coil 16, and a power supply mechanism for platen 13 for supplying RF power to the platen 10. A cylindrical plasma density adjusting member 20 which is made of a conductive material grounded is fixedly provided on an inner wall of the chamber 2 between the plasma generating space 9 and the platen 10. While plasma passes through the plasma density adjusting member 20, the in-plane density of the plasma is equalized, and then the plasma is guided to the substrate K.</p> |
