NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

摘要

A method for programming a nonvolatile memory device including a plurality of strings which are vertically formed on a substrate between bit lines and a common source line includes the steps of: setting the common source line with a predetermined voltage; floating the set common source line; performing a program operation on memory cells connected to the selected word line; and performing a verifying operation on the memory cells.