| 摘要 |
<p>A vertical peeling method of a protection film for a semiconductor substrate includes: an absorption grabbing step (S10) in which a vacuum absorption plate (11) absorbs a substrate (S), when the substrate attached with a film is loaded on the vacuum absorption plate (11); a unit proceeding step (S20) in which a unit transportation shuttle (30) mounted with a flaw forming unit (40) and a taping unit (40) proceeds; a flaw forming step (S30) in which the flaw forming unit (40) forms a flaw part assisting film peeling on the periphery of a film (F) attached to the substrate (S); a preliminary film peeling step (S40) in which the taping unit (50) separates the periphery of the film (F) from the substrate by moving backward after taping the flaw part; a film peeling step (S50) in which the taping unit (50) peels the film from the substrate as descending on a vertical frame (35) of the unit transportation shuttle (30); and a return step (S60) in which the taping unit (50) ascends again and the unit transportation shuttle (30) moves backward to return to an initial position.</p> |
