| 摘要 |
A vertical memory apparatus includes: a low resistance layer formed on a lower insulator film; a channel film formed on the low resistance layer; vertical channels extended in a first direction perpendicular to an upper surface of the channel film; and gate lines provided on outer walls of the vertical channels, and arranged to be distanced from each other along the first direction in sequence. The low resistance layer might be able to reduce the resistance of the channel film. |
