MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND ERASE METHOD THEREOF

摘要

A method for erasing a 3D nonvolatile memory device according to an embodiment of the present invention includes the steps of: receiving an erase command; applying an erase voltage to a selected memory region in response to the erase command; stopping an erasing operation by the erase voltage after a specific time has elapsed from the time when the erase voltage is applied; receiving a resume command after reference time has elapsed from the time point when the erasing operation is stopped; and applying the erase voltage to the memory region for the specific time according to the resume command.