| 摘要 |
<p>On a substrate (1), a silicon carbide layer (19) provided with a main surface is formed. A mask (17) is formed to cover a portion of the main surface of the silicon carbide layer (19). The main surface of the silicon carbide layer (19) on which the mask (17) is formed is thermally etched using chlorine-based gas so as to provide the silicon carbide layer (19) with a side surface (SS) inclined relative to the main surface. The step of thermally etching is performed in an atmosphere in which the chlorine-based gas has a partial pressure of 50% or smaller.</p> |
