发明名称 ELECTROSTATIC PROTECTION FOR STACKED MULTI-CHIP INTEGRATED CIRCUITS
摘要 One feature pertains to a multi-chip module that comprises at least a first integrated circuit (IC) die and a second IC die. The second IC die has an input/output (I/O) node electrically coupled to the first IC die by a through substrate via. The second die's active surface also includes a fuse that is electrically coupled to the I/O node and adapted to protect the second IC die from damage caused by an electrostatic discharge (ESD). In particular, the fuse protects the second IC die from ESD that may be generated as a result of electrically coupling the first die to the second die during the manufacturing of the multi-chip module. Upon coupling the first die to the second die, the fuse may bypass the ESD current generated by the ESD to ground. After packaging of the multi-chip module is complete, the fuse may be blown open.
申请公布号 EP2904638(A1) 申请公布日期 2015.08.12
申请号 EP20130779997 申请日期 2013.10.03
申请人 QUALCOMM INCORPORATED 发明人 HENDERSON, BRIAN M.;TAN, CHIEW-GUAN;UVIEGHARA, GREGORY A.;JALILIZEINALI, REZA
分类号 H01L23/60;H01L23/525;H01L25/00;H01L25/065 主分类号 H01L23/60
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