发明名称 スキャン非同期記憶素子およびそれを備えた半導体集積回路ならびにその設計方法およびテストパターン生成方法
摘要 A scan asynchronous memory element includes: an asynchronous memory element configured to receive an n-input; and a scan control logic circuit configured to generate an n-bit signal input and the n-input to the asynchronous memory element from a scan input. The scan control logic circuit outputs the signal input when a control signal supplied to the scan control logic circuit has a first bit pattern, the scan control logic circuit outputs the scan input when the control signal has a second bit pattern, and the scan control logic circuit outputs a bit pattern allowing the asynchronous memory element to hold a previous value when the control signal has a bit pattern other than the first and second bit patterns.
申请公布号 JP5761819(B2) 申请公布日期 2015.08.12
申请号 JP20120520292 申请日期 2011.06.15
申请人 发明人
分类号 G01R31/28 主分类号 G01R31/28
代理机构 代理人
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