| 摘要 |
<p>A semiconductor device including a field effect transistor having a buffer layer (11) subjected to lattice relaxation, a channel layer (12), and an electron supply layer (13) formed in this order with group-III nitride semiconductors respectively in a growth mode parallel with a [0001] or [000-1] crystallographic axis over a substrate and having a source electrode and a drain electrode, those being coupled electrically to the channel layer, and a gate electrode formed over the electron supply layer, in which, in the buffer layer and the electron supply layer, a layer existing on the group-III atomic plane side of the channel layer has a lattice constant larger than a layer existing on the group-V atomic plane side of the channel layer; and the electron supply layer has a bandgap larger than the channel layer.</p> |
