| 摘要 |
<p>The present invention relates to a nitride semiconductor device and a manufacturing method thereof and, more particularly, to a nitride semiconductor device and a manufacturing method thereof, capable of reducing etching damage and reducing a gate current and maintaining the basic properties of the semiconductor device by forming an insulation film (or insulation layer) on the upper side and the lower side of the p-type gate layer made of AlGaN or GaN doped with a p-type dopant. For this, the semiconductor device according to one embodiment of the present invention includes a GaN channel layer, an AlGaN barrier layer which is formed on the GaN channel layer, a first gate insulation layer which is formed on a gate region defined on a part of the region of the AlGaN barrier layer, a p-type gate layer which is formed on the first gate insulation layer, is doped with the p-type dopant and is made of AlxG1-xN (0<=x<=1), and a second gate insulation layer which is formed on the p-type gate layer.</p> |
