| 摘要 |
<p>The present specification relates to a nitride semiconductor device and a manufacturing method thereof. The present invention provides the nitride semiconductor device and the manufacturing method thereof, capable of improving a breakdown voltage property and a gate current property by including a top cap layer which is formed on the p-type gate layer and is made of AlyGa1-yN (0<=y<=1) and is doped or not doped with an small amount in comparison with the p-type gate layer and the p-type gate layer which is doped wth a p-type dopant and is made of AlxGa1-xN (0<=x<=1). For this, the semiconductor device according to one embodiment of the present invention includes a GaN channel layer, an AlGaN barrier layer which is formed on the GaN channel layer, a p-type gate layer which is formed on a gate region which is defined on a part of the region of the AlGaN barrier layer, is doped with the p-type dopant, and is made of AlxGa1-xN (0<=x<=1), and a top cap layer which is formed on the p-type gate layer, and a gate electrode which is formed on the top cap layer.</p> |
