| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enhance the pulse characteristics of current and voltage to approach the DC characteristics of current and voltage. <P>SOLUTION: The semiconductor device comprises a semiconductor layer, a gate insulating film provided on the semiconductor layer, a gate electrode provided on the gate insulating film, and a gate boundary film provided on the gate insulating film to come into contact with the gate electrode at at least a part of the end of the gate electrode on the gate insulating film. The gate boundary film and the gate insulating film contain the same type of insulating material. Furthermore, an insulating protective film is provided on the gate electrode and the gate boundary film, and the protective film may contain an insulating material of different type from that of the gate boundary film and gate insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
