发明名称 Electrostatic discharge protection of amplifier cascode devices
摘要 Exemplary embodiments are directed to providing electrostatic discharge (ESD) protection of a cascode device of an amplifier. In an exemplary embodiment, a transistor is configured to receive a bias voltage and at least one circuit element coupled to the transistor and configured to receive an input voltage via an input pad. Additionally at least one diode can be coupled to a drain of the first transistor and configured to limit a voltage potential at an internal node of the amplifier caused by the input pad.
申请公布号 US9106072(B2) 申请公布日期 2015.08.11
申请号 US201213720836 申请日期 2012.12.19
申请人 QUALCOMM Incorporated 发明人 Khatri Himanshu;Choksi Ojas M;Zhuo Wei
分类号 H03F1/52;H02H9/04;H03F1/22 主分类号 H03F1/52
代理机构 代理人 Mobarhan Ramin
主权项 1. An amplifier, comprising: a transistor configured to receive a bias voltage; at least one circuit element coupled in a stack to the transistor and configured to receive an input voltage via an input pad; and at least one diode coupled to a drain of the transistor and configured to limit a voltage potential at the drain of the transistor caused by an electrostatic discharge (ESD) event at the input pad coupled to the at least one circuit element, the at least one diode configured based on the bias voltage to non-conduct during normal operation of the amplifier and conduct during the ESD event at the input pad.
地址 San Diego CA US