Method for forming metal oxide film, metal oxide film, and apparatus for forming metal oxide film

摘要

The present invention aims at providing a method for forming a metal oxide film which can further improve the production efficiency while maintaining low resistance of a metal oxide film formed thereby. In the method for forming a metal oxide film of the present invention, a solution (4) containing a metallic element and ammonia (4a) is formed into a mist. Meanwhile, a substrate (2) is heated. Then, the solution (4) formed into a mist is supplied onto a first main surface of the substrate (2) being heated.

主权项

1. A method for forming a metal oxide film, the method comprising:
(A) forming a solution comprising a metallic element and ammonia into a mist; (B) heating a substrate, wherein the heating temperature is maintained at 300° C. or less; and (C) supplying the mist from (A) onto a first main surface of the substrate from (B) to form a metal oxide film, wherein the metal oxide film is a n-type semiconductor.