Nanowire PIN tunnel field effect devices

摘要

A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second portion of the nanowire adjacent to the channel portion.

主权项

1. A nanowire tunnel device, comprising:
a nanowire spaced apart and above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, the gate structure comprising a metal layer and a conductive polysilicon capping layer disposed directly onto and encapsulating the metal layer; a first protective spacer adjacent to a sidewall of the gate structure and around portions of the nanowire extending from the gate structure; a second protective spacer adjacent to the first protective spacer, the second protective spacer is formed and fills a space between an exposed region of the nanowire and the semiconductor substrate; an n-type doped region including a first portion of the nanowire adjacent to the channel portion; and a p-type doped region including a second portion of the nanowire adjacent to the channel portion.